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Ȩ Ȩ > ¿¬±¸¹®Çå > ¿µ¹® ³í¹®Áö > Journal of EEIS

Journal of EEIS

Current Result Document :

ÇѱÛÁ¦¸ñ(Korean Title) Micromachined ZnO Piezoelectric Pressure Sensor and Pyroelectric Infrared Detector in GaAs
¿µ¹®Á¦¸ñ(English Title) Micromachined ZnO Piezoelectric Pressure Sensor and Pyroelectric Infrared Detector in GaAs
ÀúÀÚ(Author) Jun Rim Choi   Pyung Choi  
¿ø¹®¼ö·Ïó(Citation) VOL 03 NO. 02 PP. 0239 ~ 0244 (1998. 04)
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(Korean Abstract)
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(English Abstract)
Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The micorsensors incorporate a 1%u03BCm-thick sputtered ZnO capacitor supported by a 2%u03BCm-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80×80%u03BCm2 designed for use as a miniature microphone exhibits 2.99%u03BCV/%u03BCbar sensitivity at 400 Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80×80%u03BCm2 is 700 V/W and 6×108 cm Hz/W at 10 Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4%u03BCm-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4%u03BCm - gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200 oC, respectively. A differential amplifier whose voltage gain is 33.7 dB using 4%u03BCm gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.
Å°¿öµå(Keyword) ZnO Piezoelectric Pressure Sensor   Pyroelectric Infrared Detector   GaAs   MEMS  
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